TEM characterization of MnSi layers grown on Si [111] substrates
LE3 .A278 2009
2009
Robertson, Michael
Acadia University
Bachelor of Science
Honours
Physics
MnSi is a weak itinerant-electron helical magnet that becomes magnetically ordered below a Curie temperature of 29:5 K and thin lms of this material exhibit magnetic properties suitable for use in spintronic devices. The structure of MnSi thin lms grown by solid phase epitaxy on Si(111) substrates was examined using TEM in this thesis. In particular the eect of growth conditions on MnSi layer properties was investigated. Growth parameters examined in this work were: annealing time, deposited Mn layer thickness, and silicon capping layer thickness. When all other growth conditions were kept constant, annealing time was found to in uence the phase of the MnSi. Monocrystalline MnSi occurred in all annealed samples of the annealing- time study, while polycrystalline MnSi occurred only in the longest-annealed sample. With all other growth conditions held constant, a thicker amorphous silicon capping layer was found to increase in-plane strain of monocrystalline MnSi on a crystalline silicon substrate. Capping layer thickness did not in uence distribution of MnSi in the samples while the deposited Mn layer thickness aected both the phase and distribution of MnSi. Sample growth conditions were found to have a signicant impact on the phase and distribution of MnSi.
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https://scholar.acadiau.ca/islandora/object/theses:578
