Transmission electron microscopy analysis of MnSi on SiC
LE3 .A278 2016
Bachelor of Science
Out-of-plane skyrmions are predicted to be present in MnSi thin films grown on SiC substrates due to the easy-axis, in-plane compressive strain experienced by the MnSi layer. Transmission electron microscopy techniques were used to examine multiple MnSi/SiC samples for the possibility of exhibiting this phenomenon. The growth morphology and orientation of the MnSi layer were analyzed and the strain exhibited by the layer was measured. The MnSi layer was found to have a non-uniform growth with two dominant orientations, 0° and 16.1°,and a widespread polycrystalline phase. The strain in the samples was measured to be a tensile strain as posed to the expected compressive strain and much lower in magnitude than predicted; thus not capable of inducing out-of-plane skyrmions in the MnSi layer.
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