Comment on “Robust Formation of Skyrmions and Topological Hall Effect Anomaly in Epitaxial Thin Films of MnSi”

Monchesky, T. L.; Loudon, J. C.; Robertson, M. D.; Bogdanov, A. N.

doi:10.1103/PhysRevLett.112.059701

Monchesky, T. L., Loudon, J. C., Robertson, M. D., & Bogdanov, A. N. (2014). Comment on “Robust Formation of Skyrmions and Topological Hall Effect Anomaly in Epitaxial Thin Films of MnSi”. Physical Review Letters. https://doi.org/10.1103/PhysRevLett.112.059701

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Title: Comment on “Robust Formation of Skyrmions and Topological Hall Effect Anomaly in Epitaxial Thin Films of MnSi”
Author: Monchesky, T. L.
Loudon, J. C.
Robertson, M. D.
Bogdanov, A. N.
Author ORCIDs: https://orcid.org/0000-0001-8371-2019
DOI: 10.1103/PhysRevLett.112.059701
ISSN: 0031-9007
1079-7114
Volume: 112
Issue: 5
Start Page: 059701
End Page: 059703
Description: The authors of the Letter offer a Reply to the original article: Robust Formation of Skyrmions and Topological Hall Effect Anomaly in Epitaxial Thin Films of MnSi Yufan Li, N. Kanazawa, X. Z. Yu, A. Tsukazaki, M. Kawasaki, M. Ichikawa, X. F. Jin, F. Kagawa, and Y. Tokura Phys. Rev. Lett. 110, 117202 (2013)
Date: 2014-02-04
Version: Version of Record
Permanent Link: https://scholar.acadiau.ca/islandora/object/citations:544
Resource Type: article
Host Title: Physical Review Letters

Page Views: 1090

Link to publisher's version: dx.doi.org/10.1103/PhysRevLett.112.059701

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Comment on “Robust Formation of Skyrmions and Topological Hall Effect Anomaly in Epitaxial Thin Films of MnSi”

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