Structure of MnSi on SiC(0001)
https://orcid.org/0000-0001-8371-2019
10.1103/PhysRevB.94.184416
2469-9950 2469-9969
94
18
184416
184424
We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [110] MnSi(111) ¯ [1120] ¯ SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ◦C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy
2016-11-14
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https://scholar.acadiau.ca/islandora/object/citations:540
article
Physical Review B